Toshiba's New SiC MOSFETs Delivers Low On-Resistance and Significantly Reduced Switching Loss | Toshiba Electronic Devices & Storage Corporation | Americas – United States
Improving the specific on-resistance and shortcircuit ruggedness tradeoff of 1.2-kV-class SBDembedded SiC MOSFETs through cell p
Improved reliability of 1.2kV SiC MOSFET by preventing the intrinsic body diode operation
Toshiba launches its 3rd generation SiC MOSFETs that contribute to the higher efficiency of industrial equipment - ANTARA News
SIC MOSFET MODULES FROM TOSHIBA ENABLE DOWNSIZING OF INDUSTRIAL IMPLEMENTATIONS WHILE SIMULTANEOUSLY BOOSTING EFFICIENCY LEVELS | Smart Building EMEA
Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode that Delivers Low On-Resistance and High Reliability | Business Wire
Third generation 1200V SiC MOSFETs from Toshiba boost industrial power-conversion efficiency | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA)
Toshiba's New Device Structure Improves SiC MOSFET High Temperature Reliability and Reduces Power Loss | Toshiba Electronic Devices & Storage Corporation | Asia-English
Toshiba's Advance in Gate-Insulating Film Process Technology Decreases Resistance in SiC-MOSFETs -Next Generation Power Device Technology Reduces Power Consumption and CO<sub>2</sub> Emissions- | Corporate Research & Development Center | Toshiba
3rd-Generation SiC MOSFETs Offer High Performance | DigiKey
Toshiba's Newly Launched 1200V and 1700V Silicon Carbide MOSFET Modules Will Contribute to Smaller, More Efficient Industrial Equipment
Crystals | Free Full-Text | Review of Silicon Carbide Processing for Power MOSFET
Features of Toshiba SiC MOSFET Modules | Toshiba Electronic Devices & Storage Corporation | Europe(EMEA)
Yole Group - Follow the latest trend news in the Semiconductor Industry
SiC MOSFET make its way to Toshiba UPS system
Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment | Business Wire
Toshiba announces compact SiC MOSFET Module - News
Toshiba's New Gate Insulation Film Process Technology Cuts Resistance in SiC -MOSFETs | Corporate Research & Development Center | Toshiba
650V & 1200V Silicon Carbide MOSFET - Toshiba | DigiKey
Toshiba ships 1200V Silicon Carbide (SiC) MOSFET ...
Toshiba's New SiC MOSFETs Delivers Low On-Resistance and Significantly Reduced Switching Loss | Toshiba Electronic Devices & Storage Corporation | Americas – United States
3.3kV SiC MOSFET module cuts size, boosts efficiency ...
Toshiba Develops SiC MOSFET with Embedded Schottky Barrier Diode that Delivers Low On-Resistance and High Reliability | Business Wire
Toshiba Launches Silicon Carbide MOSFET Module That Contributes to Higher Efficiency and Miniaturization of Industrial Equipment | Toshiba
TW070J120B,S1Q Toshiba | Mouser
Toshiba develops SiC MOSFET with check-pattern embedded Schottky barrier diodes
Toshiba SiC MOSFETS | TTI, Inc.
