Compound Semiconductors : What Are “SiC” and “GaN”? ｜Sanken Electric
Power GaN and SiC: Entering a New Era - EE Times Asia
パワーアプリケーションにおける、SiCとGaNの比較する際に考慮すべき点 - 半導体事業 - マクニカ
第2回：GaNの商用化が加速、SiCはやや足踏み (3/4) | 連載02 省エネを創り出すパワー半導体 | Telescope Magazine
市場報導： 日本AIST成功試製GaN結合SiC功率半導體- 科技產業資訊室(iKnow)
Gallium Nitride (GaN) versus Silicon Carbide (SiC)
How SiC and GaN technology is affecting passive component development
來自愛沃特的GaN on SiC/Si基板提案：材料世界網
SiC vs GaN Head-to-Head Performance Comparison | GaN Systems
ハイブリッド型トランジスタ、GaNとSiCを一体化：産総研が作製、動作実証にも成功 - EE Times Japan
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
GaN：電力密度の限界を押し上げると同時に、効率も向上 | TI.com
GaN vs. SiC Transistors - Power Electronics News
What makes SiC and GaN suitable for high-power designs - Planet Analog
Market analysis: "Who really requires GaN & SiC power devices ?"
産総研：GaNとSiCを一体化したハイブリッド型トランジスタを世界で初めて動作実証
Design Considerations with GaN & SiC - Power Electronics News
産総研：GaNとSiCを一体化したハイブリッド型トランジスタを世界で初めて動作実証
Benefits of GaN and SiC in NextGen OBCs- Power Electronics News
High Thermal Boundary Conductance across Bonded Heterogeneous GaN–SiC Interfaces,ACS Applied Materials & Interfaces - X-MOL
Compound Semiconductors : What Are “SiC” and “GaN”? ｜Sanken Electric
SiCおよびGaN半導体 | DigiKey
.png "The Essential Steps for High Performance GaN on SiC RF Devices")
The Essential Steps for High Performance GaN on SiC RF Devices
Infineon: Experience the difference of Si / SiC / GaN technology - YouTube
Next-Gen GaN-on-SiC Power Devices from New Epi Growth Mechanism - News
低コストで高性能な高周波トランジスタを製造できるGaN積層構造を開発――5Gの普及に貢献 エア・ウォーター - fabcross for エンジニア
Compound Semiconductors : What Are “SiC” and “GaN”? ｜Sanken Electric
GaNとSiCによるハイブリッド型トランジスタの動作実証に産総研が成功 | TECH+（テックプラス）
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
GaN Technology - GaN-on-Si - Transphorm
