Cross-sectional schematic of normally-off GaN MOSFET with p-GaN... | Download Scientific Diagram
GaN transistor characteristics at elevated temperatures: Journal of Applied Physics: Vol 106, No 7
東芝，GaN-MOSFETの信頼性を向上するプロセスを開発 | OPTRONICS ONLINE オプトロニクスオンライン
GaN Transistor for Several Power Applications - Power Electronics News
SiCおよびGaN半導体 | DigiKey
Digi-Key ElectronicsのGaN電源製品リソース | DigiKey
How GaN FETs Have Become the Technology of Choice for Audiophiles - Technical Articles
PowerUP EXPO 2021: Fundamentals of GaN and SiC power devices
Market analysis: "Who really requires GaN & SiC power devices ?"
How GaN FETs with integrated drivers and self-protection will enable the next generation of industrial power designs - Power management - Technical articles - TI E2E support forums
Color online Cross section of the fabricated GaN MOSFET and MOS-HEMT. | Download Scientific Diagram
業界最小の＋100V耐圧GaN FET、EPCがサーバー向け | 日経クロステック（xTECH）
900V 170mΩ Gallium Nitride (GaN) FET - Transphorm | Mouser
GaNの歩留まり90%や、耐圧1200Vの縦型構造など新GaNパワーFET - セミコンポータル
GaN Power Devices: Potential, Benefits, and Keys to Successful Use | Mouser
GaN FETの特性：GaNパワー半導体入門（2）（1/4 ページ） - EDN Japan
GaN FETs: The Technology of Choice for Audiophiles - Power Electronics News
What is GaN? Gallium Nitride (GaN) Semiconductors Explained | EPC
Practical considerations when comparing SiC and GaN in power applications - Elettronica Plus
GAN063-650WSA - 650 V, 50 mΩ Gallium Nitride (GaN) FET | Nexperia
GaN power devices: Perfecting the vertical architecture - News
GaN-HEMTの特徴 | 半導体製品 | 新電元工業株式会社- Shindengen
GaN Power HEMT > 650V VS SiC MOSFET- Power Electronics News
新しい耐圧200 VのeGaNデバイスは、成熟したシリコン・パワーMOSFETに比べて性能が2倍です
Increasing gallium nitride MOSFET threshold voltage
