iGaNPower designed a first 1200V E-Mode GaN HemT
Bosch to develop 1200V GaN process for automotive ...
SiC in Stock: 1200V, 21mΩ Baseplate-less SiC Six-Pack Module in Industry-Standard Footprint – GaN & SiC Tech Hub
Design Considerations with GaN & SiC - Power Electronics News
Epitaxial growth of GaN buffer layers demo-ed at Imec
Breakthrough result could pave way for GaN to enter into the SiC high voltage domain
1200V Rating Achieved on Vertical GaN Power Devices - Power Electronics News
Wolfspeed 1200V & 1700V Half-Bridge SiC Modules Designed for Ultra-High Power Density – GaN & SiC Tech Hub
NexGen Vertical GaN® | Gallium Nitride (GaN) Semiconductor | Power Device - NexGen Power Systems
Buffers for GaN power on AlN substrate
1200V GaNFET in DFN8x8 Package – GaNPower
Transphorm to Demo 99% Efficiency Power Switching Using GaN Power Transistor at ISPSD 2022 - EE Times Asia
GaN Wide Bandgap Semiconductor Enabling 1200V and Beyond Power Switches, Now Commercially Available for 200 mm Large Scale Manufacturing > U.S. Naval Research Laboratory > NRL News
VisIC Launches 1200 V GaN Devices | Electronics360
Industry's first 1200V Half Bridge Module based on GaN technology
GaNPower Demonstrates Industry's First 1200 V Single-Die E-Mode GaN Power Devices – GaNPower
Vertical GaN Advantages in the Industry - Power Electronics News
ULTRA-LOW LOSS 600V– 1200V GAN POWER TRANSISTORS FOR HIGH EFFICIENCY APPLICATIONS
![4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram](https://www.researchgate.net/publication/316082422/figure/fig3/AS:668200039612418@1536322712314/Market-positioning-of-SiC-and-GaN-Power-devices-17.jpg "4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram")
4 Market positioning of SiC and GaN Power devices [17] | Download Scientific Diagram
VisIC Technologies Partners With TSMC to Offer Industry's Most Advanced 1200V GaN-based Power Device Solutions
Philip Zuk on LinkedIn: Transphorm to Demonstrate 99% Efficiency Power Switching with a 1200 Volt…
IV Works to develop 1200V GaN semiconductor material with US' Applied - ETNews
1200V GaN-on-Si reaches 300mm wafers ...
Odyssey readies 1200V vertical GaN to take on SiC ...
Microsemi – GaN & SiC Tech Hub
